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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF175LU/D The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. * Guaranteed Performance MRF175LU @ 28 V, 400 MHz ("U" Suffix) Output Power -- 100 Watts Power Gain -- 10 dB Typ Efficiency -- 55% Typ MRF175LV @ 28 V, 225 MHz ("V" Suffix) Output Power -- 100 Watts Power Gain -- 14 dB Typ Efficiency -- 65% Typ * 100% Ruggedness Tested At Rated Output Power * Low Thermal Resistance * Low Crss -- 20 pF Typ @ VDS = 28 V G S MRF175LU MRF175LV 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER FETs D CASE 333-04, STYLE 2 MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TJ Value 65 40 13 270 1.54 -65 to +150 200 Unit Vdc Vdc Adc Watts W/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.65 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 50 mA) Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) Gate-Body Leakage Current (VGS = 20 V, VDS = 0) V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 2.5 1.0 Vdc mAdc Adc (continued) Handling and Packaging -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 8 (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1997 MRF175LU MRF175LV 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) Drain-Source On-Voltage (VGS = 10 V, ID = 5.0 A) Forward Transconductance (VDS = 10 V, ID = 2.5 A) VGS(th) VDS(on) gfs 1.0 0.1 2.0 3.0 0.9 3.0 6.0 1.5 -- Vdc Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Ciss Coss Crss -- -- -- 180 200 20 -- -- -- pF pF pF FUNCTIONAL CHARACTERISTICS -- MRF175LV (Figure 1) Common Source Power Gain (VDD = 28 Vdc, Pout = 100 W, f = 225 MHz, IDQ = 100 mA) Drain Efficiency (VDD = 28 Vdc, Pout = 100 W, f = 225 MHz, IDQ = 100 mA) Electrical Ruggedness (VDD = 28 Vdc, Pout = 100 W, f = 225 MHz, IDQ = 100 mA, VSWR 30:1 at all Phase Angles) Gps No Degradation in Output Power 12 55 14 65 -- -- dB % FUNCTIONAL CHARACTERISTICS -- MRF175LU (Figure 2) Common Source Power Gain (VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 100 mA) Drain Efficiency (VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 100 mA) Electrical Ruggedness (VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 100 mA, VSWR 30:1 at all Phase Angles) Gps No Degradation in Output Power 8.0 50 10 55 -- -- dB % BIAS R1 C4 C1 L1 C2 C3 C6 C5 R2 L4 L2 C10 RFC1 +28 Vdc C11 L3 C9 RF INPUT RF OUTPUT C7 C8 D.U.T. C1, C2, C8 -- Arco 463 or Equivalent C3, C7 -- 25 pF Unelco Cap C4 -- 1000 pF Chip Cap C5 -- 0.01 F Chip Cap C6 -- 250 pF Unelco Cap C9 -- Arco 462 or Equivalent C10 -- 1000 pF ATC Chip Cap C11 -- 10 F 100 V Electrolytic L1 -- Hairpin Inductor #18 Wire L3 -- Hairpin Inductor #16 Wire 0.45 0.2 L4 -- 2 Turns #16 Wire 5/16 ID RFC1 -- VK200-4B R1 -- 1.0 k 1/4 W Resistor R2 -- 100 Resistor 0.32 0.15 L2 -- Stripline Inductor 0.200 x 0.500 Figure 1. 225 MHz Test Circuit MRF175LU MRF175LV 2 MOTOROLA RF DEVICE DATA C11 C12 L3 C13 C14 +v BIAS C9 .01 mf R2 L2 R1 IN C1 L1 Z2 Z3 C8 OUT GND Z1 C3 C4 C5 C6 C7 C2 D.U.T. C1, C8 -- 270 pF ATC Chip Cap C2, C4, C6, C7 -- 1.0-20 pF Trimmer Cap C3 -- 15 pF Mini Unelco Cap C5 -- 33 pF Mini Unelco Cap C9, C12 -- 0.1 F Ceramic Cap C11, C14 -- 680 pF Feed Thru Cap C13 -- 50 F Tantalum Cap L1 -- Hairpin Inductor #18 Wire 0.25 0.4 R1 -- 10 k 1/4 W Resistor R2 -- 1 k 1/4 W Resistor R3 -- 1.5 k 1/4 W Resistor Z1 -- Microstrip Line 0.950 x 0.250 Z2 -- Microstrip Line 1 x 0.250 Z3 -- Microstrip Line 0.550 x 0.250 Board Material -- 0.062 Teflon -- fiberglass, r = 2.56, 1 oz. copper clad both sides L2 -- 12 Turns #18 Wire 0.450 ID L3 -- Ferroxcube VK200 20/4B Figure 2. 400 MHz Test Circuit TYPICAL CHARACTERISTICS 4000 f T, UNITY GAIN FREQUENCY (MHz) 100 I D , DRAIN CURRENT (AMPS) 3000 VDS = 20 V 2000 10 V 10 1000 TC = 25C 0 0 0 2 4 6 8 10 12 14 16 18 20 0 10 ID, DRAIN CURRENT (AMPS) 100 ID, DRAIN CURRENT (AMPS) Figure 3. Common Source Unity Current Gain Frequency versus Drain Current Figure 4. DC Safe Operating Area MOTOROLA RF DEVICE DATA MRF175LU MRF175LV 3 TYPICAL CHARACTERISTICS V GS, GATE SOURCE VOLTAGE (NORMALIZED) 5 I D , DRAIN CURRENT (AMPS) 4 3 2 1 0 TYPICAL DEVICE SHOWN, VGS(th) = 3 V 1.2 VDD = 28 V 1.1 ID = 4 A VDS = 10 V 1 3A 2A 0.9 100 mA 0.8 -25 1 2 3 4 5 6 0 25 50 75 100 125 150 175 VGS, GATE-SOURCE VOLTAGE (VOLTS) TC, CASE TEMPERATURE (C) Figure 5. Drain Current versus Gate Voltage (Transfer Characteristics) Figure 6. Gate-Source Voltage versus Case Temperature 1000 500 C, CAPACITANCE (pF) 200 100 50 20 0 0 5 10 15 20 25 Coss Crss VGS = 0 V f = 1 MHz Coss Ciss VDS, DRAIN-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance versus Drain-Source Voltage MRF175LU MRF175LV 4 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS MRF175LV 160 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 140 120 100 80 60 40 20 12 16 20 f = 225 MHz IDQ = 100 mA 24 28 4W 2W Pin = 6 W 160 140 120 100 80 60 40 20 12 14 16 18 20 22 IDQ = 100 mA f = 400 MHz 24 26 28 10 W 6W Pin = 14 W MRF175LU VDD, SUPPLY VOLTAGE (VOLTS) SUPPLY VOLTAGE (VOLTS) Figure 8. Output Power versus Supply Voltage Figure 9. Output Power versus Supply Voltage 30 25 POWER GAIN (dB) 20 15 10 5 VDS = 28 V IDQ = 100 mA Pout = 100 W 5 10 20 50 100 f, FREQUENCY (MHz) 200 500 Pout , OUTPUT POWER (WATTS) 160 140 120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 VDD = 28 V IDQ = 100 mA 16 18 20 400 MHz f = 225 MHz Pin, INPUT POWER (WATTS) Figure 10. Power Gain versus Frequency Figure 11. Output Power versus Input Power MOTOROLA RF DEVICE DATA MRF175LU MRF175LV 5 INPUT AND OUTPUT IMPEDANCE VDD = 28 V, IDQ = 100 mA, (Pout = 100 W) f MHz 175 175 Zin 100 30 Zo = 10 30 225 300 300 ZOL* f = 400 MHz f = 400 MHz 30 100 150 175 225 300 400 Zin Ohms 2.80 - j4.00 1.40 - j2.80 1.10 - j1.90 1.00 - j1.25 0.95 - j0.65 0.95 + j0.20 1.05 + j1.15 ZOL* Ohms 3.65 - j1.30 2.60 - j1.50 2.10 - j1.40 1.80 - j1.20 1.50 - j0.80 1.35 - j0.30 1.45 + j0.55 150 100 225 150 ZOL* = CONJUGATE OF THE OPTIMUM LOAD IMPEDANCE INTO WHICH THE DEVICE OUTPUT OPERATES AT A GIVEN OUTPUT POWER, VOLTAGE AND FREQUENCY. Figure 12. RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to- source (Cgs). The PN junction formed during the fabrication of the FET results in a junction capacitance from drain-to- source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications. DRAIN Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd rent level. This is equivalent to fT for bipolar transistors. Since this test is performed at a fast sweep speed, heating of the device does not occur. Thus, in normal use, the higher temperatures may degrade these characteristics to some extent. DRAIN CHARACTERISTICS One figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate-source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the FET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high -- on the order of 109 ohms -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage slightly in excess of the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Cgd GATE Cds Cgs SOURCE LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain data presented, Figure 3 may give the designer additional information on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain cur- MRF175LU MRF175LV 6 MOTOROLA RF DEVICE DATA Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps damp transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. HANDLING CONSIDERATIONS When shipping, the devices should be transported only in antistatic bags or conductive foam. Upon removal from the packaging, careful handling procedures should be adhered to. Those handling the devices should wear grounding straps and devices not in the antistatic packaging should be kept in metal tote bins. MOSFETs should be handled by the case and not by the leads, and when testing the device, all leads should make good electrical contact before voltage is applied. As a final note, when placing the FET into the system it is designed for, soldering should be done with a grounded iron. DESIGN CONSIDERATIONS The MRF175L is a RF power N-channel enhancement mode field-effect transistor (FETs) designed for HF, VHF and UHF power amplifier applications. Motorola FETs feature a vertical structure with a planar design. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal. DC BIAS The MRF175L is an enhancement mode FET and, therefore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. RF power FETs require forward bias for optimum performance. The value of quiescent drain current (IDQ) is not critical for many applications. The MRF175L was characterized at IDQ = 100 mA, each side, which is the suggested minimum value of IDQ. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may be just a simple resistive divider network. Some applications may require a more elaborate bias sytem. GAIN CONTROL Power output of the MRF175L may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems. MOTOROLA RF DEVICE DATA MRF175LU MRF175LV 7 PACKAGE DIMENSIONS -A- N D 2 1 3 Q 2 PL 0.13 (0.005) K -B- M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K L N P Q STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 0.965 0.985 0.390 0.410 0.250 0.290 0.190 0.210 0.095 0.115 0.215 0.235 0.725 BSC 0.155 0.175 0.004 0.006 0.195 0.205 0.740 0.770 0.415 0.425 0.390 0.400 0.120 0.135 MILLIMETERS MIN MAX 24.51 25.02 9.91 10.41 6.73 7.36 4.83 5.33 2.42 2.92 5.47 5.96 18.42 BSC 3.94 4.44 0.10 0.15 4.95 5.21 18.80 19.55 10.54 10.80 9.91 10.16 3.05 3.42 P 4 K F G J H N N C -T- SEATING PLANE EMITTER COLLECTOR EMITTER BASE CASE 333-04 ISSUE E Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 MRF175LU MRF175LV 8 *MRF175LU/D* MRF175LU/D MOTOROLA RF DEVICE DATA |
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